Sulfur Hexafluoride mai iskar gas ne tare da kyakkyawan insulating kaddarorin kuma ana iya amfani da waɗannan ayyukan, masu canzawa, masu canzawa kuma ana iya amfani da su azaman lantarki. Babban saƙo mai tsabta sulfur Hexafluororide shine kyakkyawan Etchant Etchant, wanda ake amfani dashi a fagen fasahar microcronics. A yau, Niu Ruide na gas Edita Yueee zai gabatar da aikace-aikacen sulfur Hexaflumide a cikin silicon nitride etching da kuma tasirin sigogi.
Mun tattauna plasma plasma etching sinx tsari, ciki har da canza ikon plasma kariya Layer kariyar kayan karewa Layer / shi, sf6 / shi / o2 plasma da kudi na Sf6 Kuma bincika alaƙar da ke tsakanin canjin darajar Sink etching da nau'in plasma da maida hankali.
Nazari na gano cewa lokacin da wutar plasma ta karu, ragin etching yana ƙaruwa; Idan yawan kwararar sf6 a cikin plasma yana ƙaruwa, da ɗan itacen ɗan tabarma yana ƙaruwa kuma yana da alaƙa da ƙimar etching. Bugu da kari, bayan an hada o2 GASKIYA GASKIYA TAFIYA, AMFANIN CIKIN SAUKI NA O2 / SF6 zai iya taimakawa wajen musayar sf6. (2) Lokacin da O2 Cin Rage-kwarara ya fi 0.2 zuwa tazara 1, a wannan lokacin, saboda yawan adadin Sf6 don samar da f atoms, ragin etching shine mafi girma; Amma a lokaci guda, O Thinoms a Plasma suma suna ƙaruwa kuma yana da sauƙi don ƙirƙirar Siox ko Simxo (YX) tare da fina-finan Sinma, kuma mafi wahalar da f atoms zai zama don amsawa. Sabili da haka, ƙididdigar unching yana fara rage gudu lokacin da O2 / sf6 rabo kusa da 1. (3) Lokacin da O2 / sf6 rabo sama da 1, ƙididdigar etching yana raguwa. Sakamakon karuwa a cikin O2, Rangewaran F Thinoms sun yi karo da O2 da nau'i na, wanda ke rage yawan 'yan thinoms, wanda ya haifar da raguwa a cikin ƙididdigar mahaifa. Ana iya ganin shi daga wannan lokacin da aka ƙara O2 da aka kwarara, da sf6 ya kasance tsakanin 0.2 da 0.8, da mafi kyawun ƙima za a iya samu.
Lokaci: Dec-06-021
