Hexafluoride na Sulfur iskar gas ce mai kyawawan kaddarorin rufewa kuma ana amfani da ita sau da yawa a cikin kashe wutar lantarki mai ƙarfi da kuma na'urorin canza wutar lantarki, layukan watsa wutar lantarki mai ƙarfi, na'urorin canza wutar lantarki, da sauransu. Duk da haka, ban da waɗannan ayyuka, ana iya amfani da hexafluoride na sulfur azaman na'urar cire wutar lantarki. Hexafluoride na sulfur mai ƙarfi na lantarki kyakkyawan na'urar cire wutar lantarki ne, wanda ake amfani da shi sosai a fagen fasahar microelectronics. A yau, editan gas na musamman na Niu Ruide Yueyue zai gabatar da amfani da hexafluoride na sulfur a cikin etching na silicon nitride da tasirin sigogi daban-daban.
Mun tattauna tsarin SiNx na etching plasma na SF6, gami da canza ƙarfin plasma, rabon iskar gas na SF6/He da ƙara iskar cationic O2, muna tattauna tasirinsa akan ƙimar etching na layin kariyar sinadaran SiNx na TFT, da kuma amfani da hasken plasma. Spectrometer yana nazarin canje-canjen yawan kowane nau'in a cikin plasma na SF6/He, SF6/He/O2 da ƙimar rabuwar SF6, kuma yana bincika alaƙar da ke tsakanin canjin ƙimar etching na SiNx da yawan nau'in plasma.
Bincike ya gano cewa lokacin da aka ƙara ƙarfin plasma, ƙimar etching tana ƙaruwa; idan aka ƙara yawan kwararar SF6 a cikin plasma, yawan F atom yana ƙaruwa kuma yana da alaƙa mai kyau da ƙimar etching. Bugu da ƙari, bayan ƙara iskar cationic O2 a ƙarƙashin daidaitaccen ƙimar kwarara, zai sami tasirin ƙara yawan etching, amma a ƙarƙashin rabon kwararar O2/SF6 daban-daban, za a sami hanyoyin amsawa daban-daban, waɗanda za a iya raba su zuwa sassa uku: (1) Rabon kwararar O2/SF6 ƙanƙanta ne, O2 na iya taimakawa wajen rabuwar SF6, kuma ƙimar etching a wannan lokacin ya fi girma fiye da lokacin da ba a ƙara O2 ba. (2) Lokacin da rabon kwararar O2/SF6 ya fi 0.2 zuwa tazara da ke kusantowa 1, a wannan lokacin, saboda yawan rabuwar SF6 don samar da atoms na F, ƙimar etching shine mafi girma; amma a lokaci guda, ƙwayoyin O a cikin plasma suma suna ƙaruwa kuma Yana da sauƙin samar da SiOx ko SiNxO(yx) tare da saman fim ɗin SiNx, kuma yawan ƙwayoyin O atoms ɗin da ke ƙaruwa, da wahalar da ƙwayoyin F za su yi don amsawar etching. Saboda haka, ƙimar etching ta fara raguwa lokacin da rabon O2/SF6 ya kusa da 1. (3) Lokacin da rabon O2/SF6 ya fi 1 girma, ƙimar etching ta ragu. Saboda ƙaruwa mai yawa a cikin O2, ƙwayoyin F da suka rabu suna karo da O2 da nau'in OF, wanda ke rage yawan ƙwayoyin F, wanda ke haifar da raguwar ƙimar etching. Daga wannan za a iya gani cewa lokacin da aka ƙara O2, rabon kwararar O2/SF6 yana tsakanin 0.2 da 0.8, kuma ana iya samun mafi kyawun ƙimar etching.
Lokacin Saƙo: Disamba-06-2021
