Matsayin sulfur hexafluoride a cikin siliki nitride etching

Sulfur hexafluoride shine iskar gas tare da kyawawan kaddarorin kariya kuma ana amfani dashi sau da yawa a cikin kashe wutar lantarki mai ƙarfi da wutar lantarki, layin watsa wutar lantarki mai ƙarfi, masu canzawa, da sauransu. Babban darajar sulfur hexafluoride shine ingantaccen kayan lantarki, wanda ake amfani dashi sosai a fagen fasahar microelectronics. Yau, editan iskar gas na musamman Niu Ruide Yueyue zai gabatar da aikace-aikacen sulfur hexafluoride a cikin etching silicon nitride da tasirin sigogi daban-daban.

Muna tattauna tsarin SF6 plasma etching SiNx tsari, ciki har da canza ikon plasma, rabon iskar gas na SF6 / Shi da kuma ƙara cationic gas O2, yana tattauna tasirinsa akan ƙimar etching na SiNx element kariyar Layer na TFT, da kuma yin amfani da radiation plasma The spectrometer yana nazarin canje-canje na maida hankali na kowane nau'i a cikin SF6 / Shi, SF6 / He / O2 na jini na SF6, bincike da canjin canji tsakanin SFXN da SFx. etching rate da kuma nau'in plasma taro.

Nazarin ya gano cewa lokacin da aka ƙara ƙarfin plasma, ƙimar etching yana ƙaruwa; idan adadin kwararar SF6 a cikin plasma ya karu, F atom maida hankali yana ƙaruwa kuma yana da alaƙa da alaƙa da ƙimar etching. Bugu da kari, bayan an hada o2 GASKIYA GASKIYA TAFIYA, AMFANIN CIKIN SAUKI NA O2 / SF6 zai iya taimakawa wajen musayar sf6. (2) Lokacin da rabo na O2 / SF6 ya fi 0.2 zuwa tazarar da ke gabatowa 1, a wannan lokacin, saboda yawan adadin rarrabawar SF6 don samar da kwayoyin F, ƙimar etching shine mafi girma; amma a lokaci guda, O atoms a cikin plasma shima yana ƙaruwa kuma yana da sauƙi a samar da SiOx ko SiNxO (yx) tare da farfajiyar fim ɗin SiNx, kuma yawancin O atom ɗin suna ƙaruwa, ƙimar F za su kasance da wahala ga etching reaction. Don haka, ƙimar etching ta fara raguwa lokacin da rabon O2/SF6 ya kusa da 1. (3) Lokacin da rabon O2/SF6 ya fi 1, ƙimar etching yana raguwa. Sakamakon karuwar O2 mai girma, ƙwayoyin F atom ɗin da aka rabu da su suna yin karo da O2 da nau'in OF, wanda ke rage yawan ƙwayar F, yana haifar da raguwa a cikin ƙimar etching. Ana iya gani daga wannan cewa lokacin da aka ƙara O2, ƙimar O2/SF6 tana tsakanin 0.2 da 0.8, kuma ana iya samun mafi kyawun etching.