Sulfur hexafluoride shine iskar gas tare da kyawawan kaddarorin kariya kuma ana amfani dashi sau da yawa a cikin kashe wutar lantarki mai ƙarfi da na'ura mai ba da wutar lantarki, layin watsa wutar lantarki mai ƙarfi, masu canzawa, da sauransu. . Babban darajar sulfur hexafluoride shine ingantaccen kayan lantarki, wanda ake amfani dashi sosai a fagen fasahar microelectronics. Yau, editan iskar gas na musamman Niu Ruide Yueyue zai gabatar da aikace-aikacen sulfur hexafluoride a cikin etching silicon nitride da tasirin sigogi daban-daban.
Muna tattauna tsarin SF6 plasma etching SiNx tsari, gami da canza ikon plasma, rabon iskar gas na SF6 / Shi da ƙara iskar gas na cationic O2, suna tattaunawa game da tasirin sa akan ƙimar etching na SiNx element kariya Layer na TFT, da kuma amfani da plasma radiation The spectrometer yayi nazarin sauye-sauye na maida hankali na kowane nau'i a cikin SF6 / He, SF6 / He / O2 plasma da kuma SF6 dissociation rate, da kuma bincika dangantaka tsakanin canji na SiNx. etching rate da kuma nau'in plasma taro.
Nazarin ya gano cewa lokacin da aka ƙara ƙarfin plasma, ƙimar etching yana ƙaruwa; idan yawan kwararar SF6 a cikin plasma ya karu, F atom maida hankali yana ƙaruwa kuma yana da alaƙa da alaƙa da ƙimar etching. Bugu da kari, bayan an hada o2 gas O2 a karkashin ƙayyadadden adadin kwarara, zai sami tasirin ƙara yawan abin da ya dace, wanda za'a iya raba su kashi uku : (1) Matsakaicin raƙuman ruwa na O2 / SF6 yana da ƙananan ƙananan, O2 na iya taimakawa wajen rarraba SF6, kuma ƙimar etching a wannan lokacin ya fi girma fiye da lokacin da ba a ƙara O2 ba. (2) Lokacin da rabo na O2 / SF6 ya fi 0.2 zuwa tazarar da ke gabatowa 1, a wannan lokacin, saboda yawan adadin rarrabawar SF6 don samar da kwayoyin F, ƙimar etching shine mafi girma; amma a lokaci guda, O atom ɗin da ke cikin plasma shima yana ƙaruwa kuma yana da sauƙi a samar da SiOx ko SiNxO (yx) tare da saman fim ɗin SiNx, kuma yawancin O atom ɗin suna ƙaruwa, ƙimar F za ta kasance da wahala. etching dauki. Don haka, ƙimar etching ta fara raguwa lokacin da rabon O2/SF6 ya kusa da 1. (3) Lokacin da rabon O2/SF6 ya fi 1, ƙimar etching yana raguwa. Sakamakon karuwar O2 mai girma, ƙwayoyin F atom ɗin da aka rabu da su suna yin karo da O2 da nau'in OF, wanda ke rage yawan ƙwayar F, yana haifar da raguwa a cikin ƙimar etching. Ana iya gani daga wannan cewa lokacin da aka ƙara O2, ƙimar O2/SF6 tana tsakanin 0.2 da 0.8, kuma ana iya samun mafi kyawun etching.
Lokacin aikawa: Dec-06-2021
