Gas ɗin da aka saba amfani da su a masana'antar semiconductor

Epitaxial (girma)Gauraye Gas

A cikin masana'antar semiconductor, iskar gas da ake amfani da ita don shuka ɗaya ko fiye da yadudduka na abu ta hanyar adana tururin sinadarai akan wani abu da aka zaɓa da kyau ana kiransa iskar epitaxial.

Iskar gas ɗin da ake amfani da su a cikin silicon sun haɗa da dichlorosilane, silicon tetrachloride dasilaneAna amfani da shi galibi don adana sinadarin silicon a cikin epitaxial, adana sinadarin silicon oxide, adana sinadarin silicon nitride, adana sinadarin silicon amorphous don ƙwayoyin hasken rana da sauran masu karɓar haske, da sauransu. Epitaxy tsari ne da ake ajiye wani abu na lu'ulu'u guda ɗaya a saman wani abu.

Tsaftace Tururin Sinadarai (CVD) Haɗaɗɗen Iskar Gas

CVD hanya ce ta ajiye wasu abubuwa da mahaɗan ta hanyar halayen sinadarai na lokacin iskar gas ta amfani da mahaɗan da ke canzawa, watau, hanyar samar da fim ta amfani da halayen sinadarai na lokacin iskar gas. Dangane da nau'in fim ɗin da aka samar, iskar gas ɗin da aka yi amfani da ita ma ta bambanta.

Yin amfani da kwayoyi masu kara kuzariGas ɗin Gauraye

A cikin ƙera na'urorin semiconductor da da'irori masu haɗawa, ana saka wasu ƙazanta a cikin kayan semiconductor don ba kayan nau'in conductivity da ake buƙata da kuma wani juriya don ƙera resistors, mahadar PN, yadudduka da aka binne, da sauransu. Iskar da ake amfani da ita a cikin aikin doping ana kiranta da iskar doping.

Ya ƙunshi arsine, phosphine, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride,boron trifluoride, diborane, da sauransu.

Yawanci, tushen allurar yana gauraya da iskar gas mai ɗaukar kaya (kamar argon da nitrogen) a cikin kabad ɗin tushe. Bayan haɗawa, ana ci gaba da zuba iskar gas a cikin tanderun watsawa kuma yana kewaye wafer ɗin, yana ajiye dopants a saman wafer ɗin, sannan yana amsawa da silicon don samar da ƙarfe masu allura waɗanda ke ƙaura zuwa silicon.

Gyaran fuskaCakuda Mai

Yin etching shine a goge saman sarrafawa (kamar fim ɗin ƙarfe, fim ɗin silicon oxide, da sauransu) akan substrate ba tare da rufe fuska da photoresist ba, yayin da ake kiyaye yankin da abin rufe fuska na photoresist, don samun tsarin hoton da ake buƙata akan saman substrate.

Hanyoyin yin etching sun haɗa da etching na sinadarai masu danshi da kuma etching na sinadarai masu busasshe. Iskar da ake amfani da ita a etching na sinadarai masu busasshe ana kiranta da etching gas.

Iskar gas mai ƙonewa yawanci ana kiranta da fluoride (halide), kamarcarbon tetrafluoride, nitrogen trifluoride, trifluoromethane, hexafluoroethane, perfluoropropane, da sauransu.


Lokacin Saƙo: Nuwamba-22-2024