Fasahar etching busasshe tana ɗaya daga cikin manyan hanyoyin. Iskar etching busasshe muhimmin abu ne a masana'antar semiconductor kuma muhimmin tushen iskar gas ne don etching plasma. Aikinsa yana shafar inganci da aikin samfurin ƙarshe kai tsaye. Wannan labarin galibi yana raba menene iskar etching da ake amfani da ita a cikin tsarin etching busasshe.
Iskar gas mai tushen fluorine: kamarcarbon tetrafluoride (CF4), hexafluoroethane (C2F6), trifluoromethane (CHF3) da perfluoropropane (C3F8). Waɗannan iskar gas na iya samar da fluoride masu canzawa yadda ya kamata lokacin da ake cire silicon da silicon mahadi, ta haka ne ake samun nasarar cire kayan.
Iskar gas mai tushen chlorine: kamar chlorine (Cl2),boron trichloride (BCl3)da kuma silicon tetrachloride (SiCl4). Iskar gas da ke tushen chlorine na iya samar da ions na chloride yayin aikin ƙwanƙwasa, wanda ke taimakawa wajen inganta saurin ƙwanƙwasawa da zaɓinsa.
Iskar gas mai tushen bromine: kamar bromine (Br2) da bromine iodide (IBr). Iskar gas mai tushen bromine na iya samar da ingantaccen aikin sassaka a wasu hanyoyin sassaka, musamman lokacin sassaka kayan aiki masu tauri kamar silicon carbide.
Iskar gas mai tushen nitrogen da iskar oxygen: kamar nitrogen trifluoride (NF3) da oxygen (O2). Waɗannan iskar gas galibi ana amfani da su don daidaita yanayin amsawa a cikin tsarin etching don inganta zaɓi da alkiblar etching.
Waɗannan iskar gas suna samun daidaiton goge saman kayan ta hanyar haɗakar feshi na zahiri da kuma halayen sinadarai yayin feshi na plasma. Zaɓin iskar feshi ya dogara da nau'in kayan da za a feshi, buƙatun zaɓin feshi, da kuma yawan feshi da ake so.
Lokacin Saƙo: Fabrairu-08-2025





