Waɗanne abubuwa ne masu amfani da shi na yau da kullun a bushe etching?

Fasaha ta bushe yana ɗaya daga cikin maɓallan. Gasshin gas bushe abu ne mai mahimmanci a cikin masana'antar ƙira da mahimmancin gas don plasma etch. Aikinta kai tsaye yana shafar inganci da aikin samfurin ƙarshe. Wannan labarin yafi hannun jari Menene yawancin gas na yau da kullun a cikin kayan etching.

Gases-tushen Gases: kamarCarbon Tetrafluhlide (CF4), hexfluoroethane (C2F6), Trifluoromethane (chf3) da Emluoropropane (C3F8). Waɗannan gas na iya haifar da ingantaccen ƙwayar ƙwayar cuta yayin da Eetching silicon da silicon mahadi, don haka cimma cirewa na kayan.

Gases na tushen chlorine-: kamar chlorine (cl2),Bor Sa Tafiya (BCL3)da silicon tetrachloride (na banza). Gases na tushen chlorine-na iya samar da oin chlorofie a yayin aiwatar da etching, wanda ke taimakawa haɓaka farashin etching da kuma buƙatar.

Gases-tushen ginin: kamar brominine (br2) da brominine iodide (IBR). Gases-tushen ginin zai iya samar da mafi kyawun aikin etching a wasu matakai, musamman lokacin da etingsants wuya kayan kamar silicon carbide.

Gases na tushen nitrogen-tushen da oxygen-tushen: kamar nitrogen brifloride (nf3) da oxygen (O2). Ana amfani da waɗannan gas na musamman don daidaita yanayin da suka yi a cikin etching tsari don inganta zaɓi da kuma daidaita na etching.

Waɗannan gas ɗin suna samun madaidaicin etching na kayan abin da aka haɗa ta jiki da halayen sunadarai yayin plasma etch. Zaɓin gas na ƙoshin etching ya dogara da nau'in kayan da za a haɗa, buƙatar buƙatun unching, da ƙididdigar da ake so.