Menene iskar gas ɗin da aka saba amfani da su a bushe etching?

Busashen fasaha na etching yana ɗaya daga cikin mahimman matakai. Dry etching gas shine mabuɗin abu a masana'antar semiconductor da kuma muhimmin tushen iskar gas don etching plasma. Ayyukansa kai tsaye yana rinjayar inganci da aikin samfurin ƙarshe. Wannan labarin yafi raba abubuwan da ake yawan amfani da iskar gas a bushewar etching.

Gas na tushen fluorine: kamarcarbon tetrafluoride (CF4), hexafluoroethane (C2F6), trifluoromethane (CHF3) da perfluoropropane (C3F8). Wadannan iskar gas na iya haifar da ingantaccen fluorides masu canzawa yayin da suke lalata silica da mahadi na silicon, ta yadda za a samu cire kayan.

Gas na tushen Chlorine: irin su chlorine (Cl2),boron trichloride (BCl3)da silicon tetrachloride (SiCl4). Gas na tushen chlorine na iya samar da ions chloride yayin aikin etching, wanda ke taimakawa wajen haɓaka ƙimar etching da zaɓin zaɓi.

Gases na tushen Bromine: irin su bromine (Br2) da bromine iodide (IBr). Gas na tushen Bromine na iya samar da mafi kyawun aikin etching a wasu matakan etching, musamman ma lokacin da aka haɗa abubuwa masu wuya kamar silicon carbide.

Gas na tushen Nitrogen da iskar oxygen: irin su nitrogen trifluoride (NF3) da oxygen (O2). Ana amfani da waɗannan iskar gas yawanci don daidaita yanayin amsawa a cikin tsarin etching don haɓaka zaɓi da shugabanci na etching.

Wadannan iskar gas suna cimma daidaitaccen etching na saman abu ta hanyar haɗuwar sputter na zahiri da halayen sinadarai yayin etching na jini. Zaɓin iskar gas ɗin ya dogara da nau'in kayan da za a yi, da buƙatun zaɓi na etching, da ƙimar etching da ake so.